MICROCHIP · Thyristors & Power Discretes · MPN APT75GN120B2G
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| Td(off) | 620ns |
|---|---|
| Pd - Power Dissipation | 833W |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Td(on) | 60ns |
| Current - Collector(Ic) | 200A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
| Gate Charge(Qg) | 425nC |
833W 200A 1.2kV FS (Field Stop) TO-247-3 Single IGBTs RoHS