MICROCHIP APT70GR65B

MICROCHIP · Thyristors & Power Discretes · MPN APT70GR65B

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Specifications

Td(off)170ns
Pd - Power Dissipation595W
Operating Temperature-55℃~+150℃@(Tj)
Td(on)19ns
Current - Collector(Ic)134A
Collector-Emitter Breakdown Voltage (Vces)650V
IGBT TypeNPT (Non-Punch Through)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)-
Gate Charge(Qg)305nC
Switching Energy(Eoff)1.46mJ
Turn-On Energy (Eon)1.51mJ

Technical details

595W 134A 650V NPT (Non-Punch Through) TO-247 Single IGBTs RoHS

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