MICROCHIP · Thyristors & Power Discretes · MPN APT70GR65B
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| Td(off) | 170ns |
|---|---|
| Pd - Power Dissipation | 595W |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Td(on) | 19ns |
| Current - Collector(Ic) | 134A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| IGBT Type | NPT (Non-Punch Through) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
| Gate Charge(Qg) | 305nC |
| Switching Energy(Eoff) | 1.46mJ |
| Turn-On Energy (Eon) | 1.51mJ |
595W 134A 650V NPT (Non-Punch Through) TO-247 Single IGBTs RoHS