MICROCHIP APT70GR120B2

MICROCHIP · Thyristors & Power Discretes · MPN APT70GR120B2

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Specifications

Pd - Power Dissipation961W
Td(off)278ns
Operating Temperature-55℃~+150℃@(Tj)
Td(on)33ns
Current - Collector(Ic)160A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
IGBT TypeNPT (Non-Punch Through)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)3.2V@15V,70A
Gate Charge(Qg)544nC
Switching Energy(Eoff)2.58mJ
Turn-On Energy (Eon)3.82mJ

Technical details

961W 160A 1.2kV NPT (Non-Punch Through) TO-247 Single IGBTs RoHS

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