MICROCHIP · Thyristors & Power Discretes · MPN APT70GR120B2
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| Pd - Power Dissipation | 961W |
|---|---|
| Td(off) | 278ns |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Td(on) | 33ns |
| Current - Collector(Ic) | 160A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| IGBT Type | NPT (Non-Punch Through) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.2V@15V,70A |
| Gate Charge(Qg) | 544nC |
| Switching Energy(Eoff) | 2.58mJ |
| Turn-On Energy (Eon) | 3.82mJ |
961W 160A 1.2kV NPT (Non-Punch Through) TO-247 Single IGBTs RoHS