MICROCHIP · Thyristors & Power Discretes · MPN APT68GA60B
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| Td(off) | 133ns |
|---|---|
| Pd - Power Dissipation | 520W |
| Td(on) | 21ns |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Current - Collector(Ic) | 121A |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
| IGBT Type | PT (Punch-Through) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
| Gate Charge(Qg) | - |
520W 121A 600V PT (Punch-Through) TO-247 Single IGBTs RoHS