MICROCHIP APT60GA60JD60

MICROCHIP · Thyristors & Power Discretes · MPN APT60GA60JD60

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Specifications

Pd - Power Dissipation356W
Current - Collector(Ic)112A
Collector-Emitter Breakdown Voltage (Vces)600V
Input Capacitance(Cies)8.01nF@25V
IGBT TypePT (Punch-Through)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)2.5V@15V,62A
Operating Temperature-55℃~+150℃@(Tj)

Technical details

356W 112A 600V PT (Punch-Through) SOT-227B-4 IGBT Modules RoHS

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