MICROCHIP APT50GT120LRDQ2G

MICROCHIP · Thyristors & Power Discretes · MPN APT50GT120LRDQ2G

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Specifications

Pd - Power Dissipation694W
Td(off)215ns
Td(on)23ns
Operating Temperature-55℃~+150℃@(Tj)
Current - Collector(Ic)106A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
IGBT TypeNPT (Non-Punch Through)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)-
Gate Charge(Qg)240nC

Technical details

694W 106A 1.2kV NPT (Non-Punch Through) TO-264 Single IGBTs RoHS

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