MICROCHIP APT50GT120B2RDQ2G

MICROCHIP · Thyristors & Power Discretes · MPN APT50GT120B2RDQ2G

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Specifications

Td(off)230ns
Pd - Power Dissipation625W
Td(on)24ns
Operating Temperature-55℃~+150℃@(Tj)
Current - Collector(Ic)94A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
IGBT TypeNPT (Non-Punch Through)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)-
Gate Charge(Qg)340nC
Turn-On Energy (Eon)-

Technical details

625W 94A 1.2kV NPT (Non-Punch Through) TO-247-3 Single IGBTs RoHS

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