MICROCHIP · Thyristors & Power Discretes · MPN APT50GN120B2G
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| Td(off) | 320ns |
|---|---|
| Pd - Power Dissipation | 543W |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Td(on) | 28ns |
| Current - Collector(Ic) | 134A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| IGBT Type | NPT (Non-Punch Through);FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
| Gate Charge(Qg) | 315nC |
| Turn-On Energy (Eon) | - |
543W 134A 1.2kV TO-247-3 Single IGBTs RoHS