MICROCHIP APT50GF120LRG

MICROCHIP · Thyristors & Power Discretes · MPN APT50GF120LRG

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Specifications

Td(off)260ns
Pd - Power Dissipation781W
Operating Temperature-55℃~+150℃@(Tj)
Td(on)25ns
Current - Collector(Ic)135A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
IGBT TypeNPT (Non-Punch Through)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)-
Gate Charge(Qg)340nC
Switching Energy(Eoff)2.64mJ
Turn-On Energy (Eon)3.6mJ

Technical details

781W 135A 1.2kV NPT (Non-Punch Through) TO-264 Single IGBTs RoHS

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