MICROCHIP · Thyristors & Power Discretes · MPN APT50GF120JRDQ3
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| Pd - Power Dissipation | 521W |
|---|---|
| Current - Collector(Ic) | 120A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Input Capacitance(Cies) | 5.32nF@25V |
| IGBT Type | NPT (Non-Punch Through) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
| Operating Temperature | -55℃~+150℃@(Tj) |
521W 120A 1.2kV NPT (Non-Punch Through) IGBT Modules RoHS