MICROCHIP · Thyristors & Power Discretes · MPN APT45GR65B
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| Td(off) | 100ns |
|---|---|
| Pd - Power Dissipation | - |
| Operating Temperature | - |
| Td(on) | 15ns |
| Current - Collector(Ic) | - |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| IGBT Type | NPT (Non-Punch Through) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
| Gate Charge(Qg) | 203nC |
650V NPT (Non-Punch Through) TO-247 Single IGBTs RoHS