MICROCHIP · Thyristors & Power Discretes · MPN APT45GP120J
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| Pd - Power Dissipation | 329W |
|---|---|
| Current - Collector(Ic) | 75A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Input Capacitance(Cies) | 3.94nF@25V |
| IGBT Type | PT (Punch-Through) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.9V@15V,45A |
| Operating Temperature | -55℃~+150℃@(Tj) |
329W 75A 1.2kV PT (Punch-Through) IGBT Modules RoHS