MICROCHIP · Thyristors & Power Discretes · MPN APT45GP120BG
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| Td(off) | 102ns |
|---|---|
| Pd - Power Dissipation | 625W |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Td(on) | 18ns |
| Current - Collector(Ic) | 100A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| IGBT Type | PT (Punch-Through) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.9V@15V,45A |
| Gate Charge(Qg) | 185nC |
625W 100A 1.2kV PT (Punch-Through) TO-247 Single IGBTs RoHS