MICROCHIP · Thyristors & Power Discretes · MPN APT45GP120B2DQ2G
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| Td(off) | 100ns |
|---|---|
| Pd - Power Dissipation | 625W |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Td(on) | 18ns |
| Current - Collector(Ic) | 113A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| IGBT Type | PT (Punch-Through) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.9V@15V,45A |
| Gate Charge(Qg) | 185nC |
625W 113A 1.2kV PT (Punch-Through) TO-247-3 Single IGBTs RoHS