MICROCHIP APT43GA90BD30

MICROCHIP · Thyristors & Power Discretes · MPN APT43GA90BD30

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Specifications

Td(off)82ns
Pd - Power Dissipation337W
Td(on)-
Operating Temperature-
Current - Collector(Ic)78A
Collector-Emitter Breakdown Voltage (Vces)900V
Reverse Transfer Capacitance (Cres)34pF
IGBT TypePT (Punch-Through)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)3V@1mA
Vce Saturation(VCE(sat))3.1V@25A,15V
Reverse Recovery Time(trr)295ns
Switching Energy(Eoff)425uJ

Technical details

337W 78A 900V PT (Punch-Through) TO-247-3 Single IGBTs RoHS

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