MICROCHIP APT40GP90JDQ2

MICROCHIP · Thyristors & Power Discretes · MPN APT40GP90JDQ2

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Specifications

Pd - Power Dissipation284W
Current - Collector(Ic)64A
Collector-Emitter Breakdown Voltage (Vces)900V
Input Capacitance(Cies)3.3nF@25V
IGBT TypePT (Punch-Through)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)3.9V@15V,40A
Operating Temperature-55℃~+150℃@(Tj)

Technical details

284W 64A 900V PT (Punch-Through) IGBT Modules RoHS

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