MICROCHIP APT40GP90B2DQ2G

MICROCHIP · Thyristors & Power Discretes · MPN APT40GP90B2DQ2G

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Specifications

Pd - Power Dissipation543W
Td(off)90ns
Operating Temperature-55℃~+150℃@(Tj)
Td(on)14ns
Current - Collector(Ic)101A
Collector-Emitter Breakdown Voltage (Vces)900V
IGBT TypePT (Punch-Through)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)3.9V@15V,40A
Gate Charge(Qg)145nC
Turn-On Energy (Eon)-

Technical details

543W 101A 900V PT (Punch-Through) TO-247-3 Single IGBTs RoHS

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