MICROCHIP · Thyristors & Power Discretes · MPN APT40GP60B2DQ2G
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| Pd - Power Dissipation | 543W |
|---|---|
| Td(off) | 64ns |
| Td(on) | 20ns |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Current - Collector(Ic) | 100A |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
| IGBT Type | PT (Punch-Through) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
| Gate Charge(Qg) | 135nC |
543W 100A 600V PT (Punch-Through) TO-247-3 Single IGBTs RoHS