MICROCHIP · Thyristors & Power Discretes · MPN APT36GA60B
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| Td(off) | 122ns |
|---|---|
| Pd - Power Dissipation | 290W |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Td(on) | 16ns |
| Current - Collector(Ic) | 65A |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
| IGBT Type | PT (Punch-Through) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.5V@15V,20A |
| Gate Charge(Qg) | 102nC |
290W 65A 600V PT (Punch-Through) TO-247 Single IGBTs RoHS