MICROCHIP APT35GP120BG

MICROCHIP · Thyristors & Power Discretes · MPN APT35GP120BG

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Specifications

Pd - Power Dissipation543W
Td(off)94ns
Operating Temperature-55℃~+150℃@(Tj)
Td(on)16ns
Current - Collector(Ic)96A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
IGBT TypePT (Punch-Through)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)3.9V@15V,35A
Gate Charge(Qg)150nC

Technical details

543W 96A 1.2kV PT (Punch-Through) TO-247 Single IGBTs RoHS

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