MICROCHIP · Thyristors & Power Discretes · MPN APT35GA90BD15
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| Pd - Power Dissipation | 290W |
|---|---|
| Td(off) | 104ns |
| Td(on) | 12ns |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Current - Collector(Ic) | 63A |
| Collector-Emitter Breakdown Voltage (Vces) | 900V |
| IGBT Type | PT (Punch-Through) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.1V@15V,18A |
| Gate Charge(Qg) | 84nC |
290W 63A 900V PT (Punch-Through) TO-247 Single IGBTs RoHS