MICROCHIP APT33GF120BRG

MICROCHIP · Thyristors & Power Discretes · MPN APT33GF120BRG

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Specifications

Td(off)210ns
Pd - Power Dissipation-
Operating Temperature-55℃~+150℃@(Tj)
Td(on)25ns
Current - Collector(Ic)52A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
IGBT TypeNPT (Non-Punch Through)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)-
Gate Charge(Qg)170nC
Switching Energy(Eoff)2.8mJ
Turn-On Energy (Eon)2.8mJ

Technical details

52A 1.2kV NPT (Non-Punch Through) TO-247 Single IGBTs RoHS

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