MICROCHIP · Thyristors & Power Discretes · MPN APT33GF120B2RDQ2G
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| Td(off) | 185ns |
|---|---|
| Pd - Power Dissipation | 357W |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Td(on) | 14ns |
| Current - Collector(Ic) | 64A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| IGBT Type | NPT (Non-Punch Through) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
| Gate Charge(Qg) | 170nC |
| Switching Energy(Eoff) | 1.515mJ |
| Turn-On Energy (Eon) | 1.315mJ |
357W 64A 1.2kV NPT (Non-Punch Through) TO-247-3 Single IGBTs RoHS