MICROCHIP · Thyristors & Power Discretes · MPN APT25GT120BRDQ2G
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| Pd - Power Dissipation | 347W |
|---|---|
| Td(off) | 150ns |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Td(on) | 14ns |
| Current - Collector(Ic) | 54A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| IGBT Type | NPT (Non-Punch Through) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
| Gate Charge(Qg) | 170nC |
347W 54A 1.2kV NPT (Non-Punch Through) TO-247 Single IGBTs RoHS