MICROCHIP · Thyristors & Power Discretes · MPN APT25GP120BG
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| Pd - Power Dissipation | 417W |
|---|---|
| Td(off) | 70ns |
| Td(on) | 12ns |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Current - Collector(Ic) | 69A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| IGBT Type | PT (Punch-Through) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.9V@15V,25A |
| Gate Charge(Qg) | 110nC |
417W 69A 1.2kV PT (Punch-Through) TO-247 Single IGBTs RoHS