MICROCHIP · Thyristors & Power Discretes · MPN APT25GN120B2DQ2G
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| Pd - Power Dissipation | 272W |
|---|---|
| Td(off) | 280ns |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Td(on) | 22ns |
| Current - Collector(Ic) | 67A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| IGBT Type | NPT (Non-Punch Through);FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
| Gate Charge(Qg) | 155nC |
| Turn-On Energy (Eon) | - |
272W 67A 1.2kV TO-247-3 Single IGBTs RoHS