MICROCHIP · Thyristors & Power Discretes · MPN APT200GT60JR
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| Pd - Power Dissipation | 500W |
|---|---|
| Operating Temperature | -55℃~+150℃@(Tj) |
| Current - Collector(Ic) | 195A |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
| Input Capacitance(Cies) | 8.65nF@25V |
| IGBT Type | NPT (Non-Punch Through) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
500W 195A 600V NPT (Non-Punch Through) SOT-227 Single IGBTs RoHS