MICROCHIP · Thyristors & Power Discretes · MPN APT200GN60J
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| Pd - Power Dissipation | 682W |
|---|---|
| Current - Collector(Ic) | 283A |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
| Input Capacitance(Cies) | 14.1nF@25V |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 1.85V@15V,200A |
| Operating Temperature | -55℃~+175℃@(Tj) |
682W 283A 600V FS (Field Stop) IGBT Modules RoHS