MICROCHIP APT200GN60B2G

MICROCHIP · Thyristors & Power Discretes · MPN APT200GN60B2G

No reviews yet — be the first to review MICROCHIP APT200GN60B2G.

Specifications

Pd - Power Dissipation682W
Td(off)560ns
Td(on)50ns
Operating Temperature-55℃~+175℃@(Tj)
Current - Collector(Ic)283A
Collector-Emitter Breakdown Voltage (Vces)600V
IGBT TypeFS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)-
Gate Charge(Qg)1.18uC
Switching Energy(Eoff)11mJ
Turn-On Energy (Eon)13mJ

Technical details

682W 283A 600V FS (Field Stop) TO-247-3 Single IGBTs RoHS

Related Thyristors & Power Discretes