MICROCHIP · Thyristors & Power Discretes · MPN APT200GN60B2G
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| Pd - Power Dissipation | 682W |
|---|---|
| Td(off) | 560ns |
| Td(on) | 50ns |
| Operating Temperature | -55℃~+175℃@(Tj) |
| Current - Collector(Ic) | 283A |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
| Gate Charge(Qg) | 1.18uC |
| Switching Energy(Eoff) | 11mJ |
| Turn-On Energy (Eon) | 13mJ |
682W 283A 600V FS (Field Stop) TO-247-3 Single IGBTs RoHS