MICROCHIP · Thyristors & Power Discretes · MPN APT15GT120BRDQ1G
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| Pd - Power Dissipation | 250W |
|---|---|
| Td(off) | 85ns |
| Td(on) | 10ns |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Current - Collector(Ic) | 36A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| IGBT Type | NPT (Non-Punch Through) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
| Gate Charge(Qg) | 105nC |
250W 36A 1.2kV NPT (Non-Punch Through) TO-247 Single IGBTs RoHS