MICROCHIP · Thyristors & Power Discretes · MPN APT150GT120JR
No reviews yet — be the first to review MICROCHIP APT150GT120JR.
| Pd - Power Dissipation | 830W |
|---|---|
| Current - Collector(Ic) | 170A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Input Capacitance(Cies) | 9.3nF@25V |
| IGBT Type | NPT (Non-Punch Through) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
| Operating Temperature | -55℃~+150℃@(Tj) |
830W 170A 1.2kV NPT (Non-Punch Through) IGBT Modules RoHS