MICROCHIP · Thyristors & Power Discretes · MPN APT150GN60B2G
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| Td(off) | 430ns |
|---|---|
| Pd - Power Dissipation | 536W |
| Td(on) | 44ns |
| Operating Temperature | -55℃~+175℃@(Tj) |
| Current - Collector(Ic) | 220A |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
| Gate Charge(Qg) | 970nC |
| Switching Energy(Eoff) | 4.295mJ |
| Turn-On Energy (Eon) | 8.81mJ |
536W 220A 600V FS (Field Stop) TO-247-3 Single IGBTs RoHS