MICROCHIP APT150GN120JDQ4

MICROCHIP · Thyristors & Power Discretes · MPN APT150GN120JDQ4

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Specifications

Pd - Power Dissipation-
Current - Collector(Ic)215A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
Input Capacitance(Cies)-
IGBT TypeFS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)-
Operating Temperature-55℃~+150℃@(Tj)

Technical details

215A 1.2kV FS (Field Stop) SOT-227-4 IGBT Modules RoHS

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