MICROCHIP APT102GA60L

MICROCHIP · Thyristors & Power Discretes · MPN APT102GA60L

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Specifications

Pd - Power Dissipation780W
Td(off)212ns
Operating Temperature-55℃~+150℃@(Tj)
Td(on)28ns
Current - Collector(Ic)183A
Collector-Emitter Breakdown Voltage (Vces)600V
IGBT TypePT (Punch-Through)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)-
Gate Charge(Qg)294nC
Switching Energy(Eoff)1.614mJ
Turn-On Energy (Eon)1.354mJ

Technical details

780W 183A 600V PT (Punch-Through) TO-264 Single IGBTs RoHS

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