MICROCHIP · Thyristors & Power Discretes · MPN APT102GA60L
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| Pd - Power Dissipation | 780W |
|---|---|
| Td(off) | 212ns |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Td(on) | 28ns |
| Current - Collector(Ic) | 183A |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
| IGBT Type | PT (Punch-Through) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
| Gate Charge(Qg) | 294nC |
| Switching Energy(Eoff) | 1.614mJ |
| Turn-On Energy (Eon) | 1.354mJ |
780W 183A 600V PT (Punch-Through) TO-264 Single IGBTs RoHS