MICROCHIP · Thyristors & Power Discretes · MPN APT100GT120JR
No reviews yet — be the first to review MICROCHIP APT100GT120JR.
| Pd - Power Dissipation | 570W |
|---|---|
| Current - Collector(Ic) | 123A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Input Capacitance(Cies) | 6.7nF@25V |
| IGBT Type | NPT (Non-Punch Through) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
| Operating Temperature | -55℃~+150℃@(Tj) |
570W 123A 1.2kV NPT (Non-Punch Through) SOT-227-4 IGBT Modules RoHS