MICROCHIP · Thyristors & Power Discretes · MPN APT100GN60LDQ4G
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| Td(off) | 310ns |
|---|---|
| Pd - Power Dissipation | 625W |
| Td(on) | 31ns |
| Operating Temperature | -55℃~+175℃@(Tj) |
| Current - Collector(Ic) | 229A |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
| Gate Charge(Qg) | 600nC |
| Switching Energy(Eoff) | 2.675mJ |
| Turn-On Energy (Eon) | 4.75mJ |
625W 229A 600V FS (Field Stop) TO-264 Single IGBTs RoHS