MICROCHIP · Thyristors & Power Discretes · MPN APT100GLQ65JU3
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| Pd - Power Dissipation | 430W |
|---|---|
| Current - Collector(Ic) | 165A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Input Capacitance(Cies) | 6.1nF@25V |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
| Operating Temperature | -55℃~+175℃ |
430W 165A 650V SOT-227-4 IGBT Modules RoHS