MCC MIW40N65RA-BP

MCC · Thyristors & Power Discretes · MPN MIW40N65RA-BP

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Specifications

Td(off)124ns
Pd - Power Dissipation306W
Td(on)12ns
Operating Temperature-40℃~+175℃@(Tj)
Current - Collector(Ic)80A
Collector-Emitter Breakdown Voltage (Vces)650V
IGBT TypeFS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)-
Gate Charge(Qg)160nC
Turn-On Energy (Eon)1.5mJ

Technical details

306W 80A 650V FS (Field Stop) TO-247AB Single IGBTs RoHS

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