MCC MIP75R12E2ATN-BP

MCC · Thyristors & Power Discretes · MPN MIP75R12E2ATN-BP

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Specifications

Pd - Power Dissipation476W
Current - Collector(Ic)75A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
Input Capacitance(Cies)4.2nF@25V
IGBT Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)-
Operating Temperature-40℃~+150℃@(Tj)

Technical details

476W 75A 1.2kV IGBT Modules RoHS

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