MCC · Thyristors & Power Discretes · MPN MIP50R12E2ATN-BP
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| Td(off) | 320ns |
|---|---|
| Pd - Power Dissipation | 288W |
| Td(on) | 168ns |
| Current - Collector(Ic) | 50A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Reverse Transfer Capacitance (Cres) | 100pF |
| IGBT Type | - |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.8V |
| Gate Charge(Qg) | 350nC |
| Operating Temperature | -40℃~+150℃@(Tj) |
| Vce Saturation(VCE(sat)) | 1.9V |
| Switching Energy(Eoff) | 4.15mJ |
288W 50A 1.2kV E2A IGBT Modules RoHS