MASPOWER MSG50T65QHC0

MASPOWER · Thyristors & Power Discretes · MPN MSG50T65QHC0

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Specifications

Pd - Power Dissipation394W
Td(off)231ns
Td(on)32ns
Operating Temperature-40℃~+175℃
Current - Collector(Ic)100A
Collector-Emitter Breakdown Voltage (Vces)650V
IGBT TypeFS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)4V@250uA
Vce Saturation(VCE(sat))2V@60A,15V
Reverse Recovery Time(trr)198ns
Switching Energy(Eoff)1.41mJ
Turn-On Energy (Eon)2.15mJ

Technical details

IGBT FS (Field Stop) 650V 100A 394W Through Hole TO-247

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