MASPOWER MSG50T65HHC0

MASPOWER · Thyristors & Power Discretes · MPN MSG50T65HHC0

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Specifications

Td(off)140ns
Pd - Power Dissipation368W
Operating Temperature-55℃~+175℃
Td(on)33ns
Current - Collector(Ic)100A
Collector-Emitter Breakdown Voltage (Vces)650V
IGBT TypeFS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)4V@250uA
Vce Saturation(VCE(sat))2.2V@50A,15V
Reverse Recovery Time(trr)125ns
Switching Energy(Eoff)1.53mJ
Turn-On Energy (Eon)650uJ

Technical details

IGBT FS (Field Stop) 650V 100A 368W Through Hole TO-247

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