MASPOWER MSG50T120FQW

MASPOWER · Thyristors & Power Discretes · MPN MSG50T120FQW

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Specifications

Td(off)282ns
Pd - Power Dissipation535W
Td(on)118ns
Operating Temperature-55℃~+175℃
Current - Collector(Ic)100A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
Input Capacitance(Cies)7.383nF@20V
IGBT TypeFS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)4.5V@250uA
Gate Charge(Qg)311nC@15V
Reverse Recovery Time(trr)256ns
Switching Energy(Eoff)1.4mJ

Technical details

IGBT FS (Field Stop) 1.2kV 100A 535W Through Hole TO-264

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