MASPOWER MSG100T65HLB3

MASPOWER · Thyristors & Power Discretes · MPN MSG100T65HLB3

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Specifications

Td(off)216ns
Pd - Power Dissipation750W
Td(on)84ns
Current - Collector(Ic)100A
Collector-Emitter Breakdown Voltage (Vces)650V
Reverse Transfer Capacitance (Cres)100pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic)3.5V@0.6mA
Vce Saturation(VCE(sat))1.65V@100A,15V
Reverse Recovery Time(trr)62ns
Switching Energy(Eoff)3.8mJ
Turn-On Energy (Eon)5.4mJ
Input Capacitance(Cies)5.012nF

Technical details

IGBT 650V 100A Through Hole TO-264

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