MASPOWER ESJ75SH120AN

MASPOWER · Thyristors & Power Discretes · MPN ESJ75SH120AN

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Specifications

Td(off)470ns
Operating Temperature-40℃~+125℃
Td(on)160ns
Current - Collector(Ic)150A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
IGBT TypeNPT (Non-Punch Through)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)4.5V@250uA
Vce Saturation(VCE(sat))3.7V@75A,15V
Gate Charge(Qg)650nC@15V
Collector Cut-Off Current (Ices)100uA
Reverse Recovery Time(trr)150ns
Switching Energy(Eoff)2.3mJ

Technical details

150A 1.2kV NPT (Non-Punch Through) FD-7 Single IGBTs RoHS

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