MASPOWER · Thyristors & Power Discretes · MPN ESJ100SH60N
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| Td(off) | 250ns |
|---|---|
| Operating Temperature | -40℃~+125℃ |
| Td(on) | 120ns |
| Current - Collector(Ic) | 200A |
| Collector-Emitter Breakdown Voltage (Vces) | 600V |
| Reverse Transfer Capacitance (Cres) | 280pF |
| IGBT Type | NPT (Non-Punch Through) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.5V@250uA |
| Vce Saturation(VCE(sat)) | 2.35V@100A,15V |
| Collector Cut-Off Current (Ices) | 100uA |
| Reverse Recovery Time(trr) | 180ns |
| Switching Energy(Eoff) | 1.9mJ |
200A 600V NPT (Non-Punch Through) FD7 Single IGBTs RoHS