MagnaChip Semicon · Thyristors & Power Discretes · MPN MBQ75T65PEHTH
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| Pd - Power Dissipation | 428W |
|---|---|
| Td(off) | 156ns |
| Td(on) | 38ns |
| Operating Temperature | -40℃~+175℃ |
| Current - Collector(Ic) | 100A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 158pF |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.5V |
| Vce Saturation(VCE(sat)) | 1.7V |
| Reverse Recovery Time(trr) | 181ns |
| Collector Cut-Off Current (Ices) | 20uA |
428W 100A 650V FS (Field Stop) TO-247 Single IGBTs RoHS