MagnaChip Semicon · Thyristors & Power Discretes · MPN MBQ50T65FESCTH
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| Pd - Power Dissipation | 375W;188W |
|---|---|
| Td(off) | 328ns;350ns |
| Td(on) | 58ns;51ns |
| Operating Temperature | -40℃~+175℃ |
| Current - Collector(Ic) | 100A;50A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 161pF |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5V |
| Vce Saturation(VCE(sat)) | 1.85V;2.2V |
| Collector Cut-Off Current (Ices) | 40uA |
| Reverse Recovery Time(trr) | 80ns;116ns |
650V FS (Field Stop) TO-247 Single IGBTs RoHS