luxin-semi YGW75N65T1

luxin-semi · Thyristors & Power Discretes · MPN YGW75N65T1

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Specifications

Td(off)660ns
Pd - Power Dissipation500W
Td(on)110ns
Operating Temperature-40℃~+175℃
Current - Collector(Ic)75A
Collector-Emitter Breakdown Voltage (Vces)650V
Reverse Transfer Capacitance (Cres)100pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic)4.6V@250uA
Vce Saturation(VCE(sat))2.2V@75A,15V
Reverse Recovery Time(trr)50ns
Switching Energy(Eoff)8.4mJ
Turn-On Energy (Eon)4.3mJ

Technical details

IGBT 650V 75A Through Hole TO-247

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