luxin-semi YGW60N65F1A1

luxin-semi · Thyristors & Power Discretes · MPN YGW60N65F1A1

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Specifications

Td(off)165ns
Pd - Power Dissipation312W
Td(on)56ns
Operating Temperature-40℃~+175℃
Current - Collector(Ic)60A
Collector-Emitter Breakdown Voltage (Vces)650V
Reverse Transfer Capacitance (Cres)70pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic)4V@250uA
Vce Saturation(VCE(sat))2.2V@60A,15V
Reverse Recovery Time(trr)90ns
Switching Energy(Eoff)890uJ
Turn-On Energy (Eon)2.2mJ

Technical details

IGBT 650V 60A Through Hole TO-247

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